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Research on the Radiation Effects and Compact Model of SiGe HBT
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
1 450,00 DH
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This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
| ISBN / EAN | 9789811351815 |
|---|---|
| Auteur | Sun, Yabin |
| Editeur | Springer Verlag, Singapore |